PART |
Description |
Maker |
TIED69 |
avalanche Photodiode
|
http:// List of Unclassifed Manufacturers ETC N.A.
|
SSO-AD-1900-TO5I SSO-AD-2500-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
SD036-70-62-531 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
SRD00514X SRD00514 SRD00514H SRD00515H |
Ge-Avalanche Photodiode with Pigtail From old datasheet system
|
SIEMENS AG Infineon Siemens Semiconductor Group
|
SD012-70-62-541 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
SD197-70-72-591 |
Cooled Large Area Red Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
SRD00512Z Q62702-P3042 SRD00512 |
From old datasheet system Ge-Avalanche Photodiode in TO Package with Integrated Optics
|
SIEMENS[Siemens Semiconductor Group]
|
APD-1351-HF APD-1351-HFA APD-1350-HX APD-1351-VT A |
Mini-Size InGaAs Avalanche PHOTODIODE with Single-Mode Pigtail 迷你尺寸铟镓砷雪崩光电二极管与单模尾
|
Optoway Technology Inc. Optoway Technology, Inc.
|
SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
|
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
|
C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|